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IN-CHAMBER MEMBER TEMPERATURE CONTROL METHOD IN-CHAMBER MEMBER SUBSTRATE MOUNTING TABLE AND PLASMA PROCESSING APPARATUS INCLUDING SAME
IN-CHAMBER MEMBER TEMPERATURE CONTROL METHOD IN-CHAMBER MEMBER SUBSTRATE MOUNTING TABLE AND PLASMA PROCESSING APPARATUS INCLUDING SAME
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机译:舱内成员温度控制方法,舱内成员基板安装台及包括该组件的等离子体处理装置
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摘要
There is provided a method capable of controlling the temperature of various members used in the plasma treatment to an optimum temperature from the start of the plasma treatment.;A method of controlling a temperature of an in-chamber member used in a plasma processing apparatus for plasma-processing a substrate to be processed, the method comprising: providing a plurality of feeders in the chamber; heating the substrate by supplying electric power through the feeder; The resistance value or the non-resistance of the member in the chamber is measured, and the electric power is controlled based on the resistance value or the temperature of the in-chamber member assumed from the specific resistance.
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