首页> 外国专利> IN-CHAMBER MEMBER TEMPERATURE CONTROL METHOD IN-CHAMBER MEMBER SUBSTRATE MOUNTING TABLE AND PLASMA PROCESSING APPARATUS INCLUDING SAME

IN-CHAMBER MEMBER TEMPERATURE CONTROL METHOD IN-CHAMBER MEMBER SUBSTRATE MOUNTING TABLE AND PLASMA PROCESSING APPARATUS INCLUDING SAME

机译:舱内成员温度控制方法,舱内成员基板安装台及包括该组件的等离子体处理装置

摘要

There is provided a method capable of controlling the temperature of various members used in the plasma treatment to an optimum temperature from the start of the plasma treatment.;A method of controlling a temperature of an in-chamber member used in a plasma processing apparatus for plasma-processing a substrate to be processed, the method comprising: providing a plurality of feeders in the chamber; heating the substrate by supplying electric power through the feeder; The resistance value or the non-resistance of the member in the chamber is measured, and the electric power is controlled based on the resistance value or the temperature of the in-chamber member assumed from the specific resistance.
机译:提供一种能够从等离子处理开始就将等离子处理中使用的各种部件的温度控制为最佳温度的方法。控制等离子处理装置中使用的室内用部件的温度的方法。等离子处理待处理的基板,该方法包括:在腔室中提供多个进料器;通过馈送器供应电力来加热基板;测量腔室中的构件的电阻值或非电阻,并且基于从比电阻假定的腔室内构件的电阻值或温度来控制电力。

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