SEMICONDUCTOR DEVICE, A SINGLE CRYSTAL SILICON WAFER, AND A SINGLE CRYSTAL SILICON INGOT, CAPABLE OF SUPPRESSING ABNORMAL EPITAXIAL GROWTH

摘要

PURPOSE: A semiconductor device, a single crystal silicon wafer, and a single crystal silicon ingot are provided to suppress a bridge between an adjacent epitaxial silicon layer by including a long axis of an active area in a 0,1,1 direction.;CONSTITUTION: A rotation notch(34) is arranged on a lower side of a single crystal silicon wafer(10). A rotation active rear(24) has a tilting angle with a y'' axis. The rotation active area is arranged in a 0,1,1 direction. The single crystal silicon wafer is used without modifying all semiconductor process device of a standard wafer. If the long axis direction of the active area is arranged in the 0,1,1 direction, the photo mask process and the measurement process of the following processes are changed.;COPYRIGHT KIPO 2010