SEMICONDUCTOR LASER, A DRIVING METHOD THEREOF, AND A SEMICONDUCTOR LASER DEVICE, CAPABLE OF PERFORMING A DRIVING OPERATION USING A PULSE CURRENT OVER TEN TIMES HIGHER THAN A CRITICAL CURRENT

摘要

PURPOSE: A semiconductor laser, a driving method thereof, and a semiconductor laser device are provide to obtain a peak light intensity with a watt level or more by combining the existing high output semiconductor laser with an electric drive based electronic device.;CONSTITUTION: A semiconductor laser device includes a pulse generator(10) and a semiconductor laser(20) driven according to a driving pulse from the pulse generator. The semiconductor laser is made of GaN based material of an emission wavelength of 405 nm. The pulse generator performs a gain switching operation of the GaN based semiconductor laser. The pulse current is ten times higher than the critical value. The width of the pulse current of the semiconductor laser is 10 nano second or less. The value of the pulse current is 0.4 ampere or more.;COPYRIGHT KIPO 2010