Impulse-coupling coefficients from a pulsed-laser ablation of semiconductor GaAs

摘要

Impulse-coupling coefficients from 1.06 - μ m, 10-ns Nd:YAG pulsed-laser radiation to GaAs targets with different areas were measured using the ballistic pendulum method in the laser power density ranging from 4.0 × 108 to 5.0 × 109 W·cm-2. A detonation wave model of the plasma was established theoretically. The expansion process of plasma after the laser pulse ends is described in detail, and the impulse-coupling coefficients from pulsed laser with different energies to GaAs with different areas were calculated using the given model. It is found that the theoretical results agree well with the experimental data.