首页> 外国专利> METHOD FOR ERASING AND PROGRAM OPERATING A FLASH DEVICE, FOR OBTAINING A PROPERTY OF A THRESHOLD VOLTAGE DISTRIBUTION IN AN ERASED STATE

METHOD FOR ERASING AND PROGRAM OPERATING A FLASH DEVICE, FOR OBTAINING A PROPERTY OF A THRESHOLD VOLTAGE DISTRIBUTION IN AN ERASED STATE

机译:在擦除状态下擦除和编程闪存设备以获取阈值电压分布的属性的方法

摘要

PURPOSE: A method for erasing and program operating a flash device is provided to improve a property of a threshold voltage distribution in an erased state by implementing an erasing operation with the threshold voltage distribution of the lowest program state.;CONSTITUTION: Threshold voltage distributions in different program states are lowered to a first state of the threshold voltage distribution close to an erased state of the threshold voltage distribution. The threshold voltage distribution of a cell in which a soft erasing operation is implemented is lower to the erased state(102). The threshold voltage distribution of a cell in which a soft erasing operation is implemented is as same as the first state of threshold voltage distribution. A ground voltage is applied to a channel by applying an erasing pulse to a word line. An erasing voltage is applied to the channel by applying the ground voltage to the word line.;COPYRIGHT KIPO 2010
机译:目的:提供一种用于擦除和编程操作闪存器件的方法,以通过以最低编程状态的阈值电压分布执行擦除操作来改善处于擦除状态的阈值电压分布的特性。不同的编程状态被降低到阈值电压分布的第一状态,接近阈值电压分布的擦除状态。实施软擦除操作的单元的阈值电压分布低于擦除状态(102)。实施软擦除操作的单元的阈值电压分布与阈值电压分布的第一状态相同。通过向字线施加擦除脉冲将接地电压施加到沟道。通过将接地电压施加到字线,将擦除电压施加到通道。; COPYRIGHT KIPO 2010

著录项

  • 公开/公告号KR20100013961A

    专利类型

  • 公开/公告日2010-02-10

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20080075725

  • 发明设计人 WOO WON SIC;KIM NAM KYEONG;

    申请日2008-08-01

  • 分类号G11C16/34;G11C16/14;

  • 国家 KR

  • 入库时间 2022-08-21 18:33:21

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