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OPERATION METHOD OF A FLASH MEMORY, FOR NARROWING THE THRESHOLD VOLTAGE DISTRIBUTION OF A MEMORY CELL

机译:一种用于确定存储单元的阈值电压分布的闪存的操作方法

摘要

PURPOSE: An operation method of a flash memory is provided to prevent an error generated from back pattern dependency(BPD) by reducing the differences of currents flowing through strings in the operation of a program verification and a reading.;CONSTITUTION: Word lines(WL1 to WL32) between a source selection line(SSL) and a drain selection line are divided into at least 2 word line groups. A program for a selected word line from the word lines is operated. The pass voltage of a higher level is not applied to a non-selected word lines included in the word line groups which is close to the drain selection line, but is applied to a non-selected word lines included in the word line groups which is close to the source selection line. Program verification for the selected word lines is operated.;COPYRIGHT KIPO 2010
机译:目的:提供一种闪存的操作方法,通过减少程序验证和读取操作中流经字符串的电流差来防止由反向模式依赖性(BPD)产生的错误。构成:字线(WL1)在源极选择线(SSL)和漏极选择线之间的至少一个字线组被分成至少两个字线组。操作从字线中选择的字线的程序。高电平的通过电压不被施加到靠近漏极选择线的字线组中包括的未选择字线,而是被施加到包含在漏极线中的字线组中的未选择字线。靠近源选择线。进行选定字线的程序验证。; COPYRIGHT KIPO 2010

著录项

  • 公开/公告号KR20100016759A

    专利类型

  • 公开/公告日2010-02-16

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20080076371

  • 发明设计人 BAIK SEUNG HWAN;

    申请日2008-08-05

  • 分类号G11C16/34;G11C16/08;

  • 国家 KR

  • 入库时间 2022-08-21 18:33:20

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