首页> 外国专利> METHOD FOR FORMING A COBALT ALLOY BASED MULTI-LAYERED DIFFUSION BARRIER THROUGH ELECTROLESS PLATING WITH TWO KINDS OF COBALT ALLOY THIN FILMS HAVING DIFFERENT COMPOSITIONS

METHOD FOR FORMING A COBALT ALLOY BASED MULTI-LAYERED DIFFUSION BARRIER THROUGH ELECTROLESS PLATING WITH TWO KINDS OF COBALT ALLOY THIN FILMS HAVING DIFFERENT COMPOSITIONS

机译:通过化学镀有两种不同组成的钴合金薄膜的基于钴合金的多层扩散壁垒的形成方法

摘要

PURPOSE: A method for forming a cobalt alloy based multi-layered diffusion barrier through electroless plating is provided to improve oxidation resistance of copper wires and to minimize damages of the wires by improving properties between the copper wires and the diffusion barrier.;CONSTITUTION: A method for forming a cobalt alloy based multi-layered diffusion barrier through electroless plating comprises a step for performing an electroless plating process on the surface of copper layers and a step for successively forming the cobalt alloy based multi-layered diffusion barrier having different compositions. The bottom layer of the diffusion barrier is formed to the cobalt alloy based multi-layered diffusion barrier. The cobalt alloy based multi-layered diffusion barrier has good resistance comparing to the resistance of electromigration of the copper wires.;COPYRIGHT KIPO 2010
机译:目的:提供一种通过化学镀形成钴合金基多层扩散阻挡层的方法,以改善铜线的抗氧化性,并通过改善铜线与扩散阻挡层之间的性能来最大程度地减少导线的损坏。通过化学镀形成基于钴合金的多层扩散阻挡层的方法包括在铜层的表面上进行化学镀工艺的步骤和依次形成具有不同组成的基于钴合金的多层扩散阻挡层的步骤。扩散阻挡层的底层形成为基于钴合金的多层扩散阻挡层。与铜线的电迁移电阻相比,基于钴合金的多层扩散阻挡层具有良好的电阻。; COPYRIGHT KIPO 2010

著录项

  • 公开/公告号KR20100033262A

    专利类型

  • 公开/公告日2010-03-29

    原文格式PDF

  • 申请/专利权人 SNU R&DB FOUNDATION;

    申请/专利号KR20080092350

  • 发明设计人 KOO HYO CHEOL;KIM JAE JEONG;

    申请日2008-09-19

  • 分类号C23C18/32;C23C18/52;C23C18/16;C23C28/00;

  • 国家 KR

  • 入库时间 2022-08-21 18:33:05

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