首页> 外国专利> RESIST LOWER FILM FABRICATING METHOD CAPABLE OF COATING A RESIST LOWER FILM MATERIAL CONTAINING A NOVOLAC TYPE RESIN INCLUDING A BISNAPHTHOL GROUP, AND THE RESIST LOWER FILM MATERIAL

RESIST LOWER FILM FABRICATING METHOD CAPABLE OF COATING A RESIST LOWER FILM MATERIAL CONTAINING A NOVOLAC TYPE RESIN INCLUDING A BISNAPHTHOL GROUP, AND THE RESIST LOWER FILM MATERIAL

机译:能够涂布包含双酚类的酚醛清漆型树脂的抗蚀剂下膜材料和抗蚀剂下膜材料的抗蚀剂下膜制造方法

摘要

PURPOSE: A resist lower film fabricating method, a pattern producing method using thereof, and a resist lower film material are provided to improve etching resistance, high heat resistance and a solvent resistance, and to produce a resist lower film without twisting during an etching process.;CONSTITUTION: A resist lower film fabricating method comprises the following steps: coating a resist lower film material containing a novolac type resin including a bisnaphthol group marked as the chemical formula 1; and heat-treating the resist lower film material at 300~600 deg C for 10~600 seconds for curing the resist lower film material. At the chemical formula 1, R1 and R2 is selected from the group consisting of a hydrogen atom, an alkyl group in a straight chain, branched, or cyclic shape, an aryl group with the carbon number of 6~20 or an arkenyl group with the carbon number of 2~20. R3 and R4 is the hydrogen atom and a glycidyl group, respectively.;COPYRIGHT KIPO 2010
机译:目的:提供抗蚀剂下膜的制造方法,使用其的图案生产方法以及抗蚀剂下膜材料,以提高耐蚀刻性,高耐热性和耐溶剂性,并在蚀刻过程中不扭曲地生产抗蚀剂下膜。组成:抗蚀剂下膜的制造方法包括以下步骤:涂覆抗蚀剂下膜材料,该抗蚀剂下膜材料包含含有标记为化学式1的联萘酚基的酚醛清漆型树脂;将抗蚀剂下膜材料在300〜600℃下热处理10〜600秒,使抗蚀剂下膜材料固化。在化学式1中,R 1和R 2选自氢原子,直链,支链或环状的烷基,碳原子数为6〜20的芳基或烯基。碳数为2〜20。 R3和R4分别是氢原子和缩水甘油基。; COPYRIGHT KIPO 2010

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