INTER-LAYER INSULATING FILM IN AN OXIDE CMP, CAPABLE OF ELIMINATING THE REWORK OF A CMP PROCESS, AND AN OXIDE CMP METHOD THEREOF

摘要

PURPOSE: An inter-layer insulating film in an oxide CMP(Chemical Mechanical Polishing) and an oxide CMP method thereof are provided to easily and accurately detect a CMP endpoint by additionally depositing a CMP stopping film during forming an inter-layer insulating film.;CONSTITUTION: A first oxide film(11) is formed as much as a preset thickness on the upper part of a lower metal wiring. A stopping film(12) is used as the stopping film of a CMP process by being deposited on the first oxide film. A second oxide film(13) is removed with a CMP process by being deposited on the upper part of the stopping film. The first oxide film is thickly formed than a preset thickness. The stopping film is a polysilicon film or a nitride film.;COPYRIGHT KIPO 2010