PHASE CHANGE MEMORY DEVICE AND A MANUFACTURING METHOD THEREOF, CAPABLE OF IMPROVING A BURYING PROPERTY OF AN INTERLAYER INSULATION LAYER BY THE INCREASE OF A PHYSICAL INTERVAL BETWEEN MEMORY CELLS

摘要

PURPOSE: A phase change memory device and a manufacturing method thereof are provided to increase thermal stability of a phase change material by reducing the number of memory cells on the same line in half.;CONSTITUTION: An impurity region is formed on a semiconductor substrate. A first memory cell includes a first bottom electrode, a first bottom electrode contact(160), and a first phase change pattern layer which are successively stacked on the impurity region. A second memory cell is diagonally separated from the first memory cell with a preset distance. The second memory cell includes a second bottom electrode, a second bottom electrode contact(200), and a second phase change pattern layer which are successively stacked on the impurity region.;COPYRIGHT KIPO 2010