PROGRAMMING METHOD OF A NONVOLATILE MEMORY DEVICE, CAPABLE OF OFFERING A PROGRAM SCHEME WHICH IS EASY FOR A SCALE-DOWN

摘要

PURPOSE: A programming method of a nonvolatile memory device is provided to prevent problems caused by the scale-down of a flash memory device by programming memory cells of a NAND flash memory device by using a hot electron injection method.;CONSTITUTION: A bit line(BL0,BL1) is driven to a bit line voltage according to data to be programmed. A string selection line(SSL0,SSL1,SSL2) is driven to a corresponding selection line voltage. A selected word line is driven to a first word line voltage. Word lines between a selected word lines(WLn-1,WLn-2,WL1,WL0) and a common source line are driven to a second word line voltage. Word lines between the selected word line and a bit line are driven to a third word line voltage.;COPYRIGHT KIPO 2010