首页> 外国专利> INDUCTIVELY COUPLED PLASMA APPARATUS WITH A STRUCTURE HOLDING DIELECTRIC, HAVING A SUPPORTING STRUCTURE HAVING A THIN DIELECTRIC SUBSTANCE

INDUCTIVELY COUPLED PLASMA APPARATUS WITH A STRUCTURE HOLDING DIELECTRIC, HAVING A SUPPORTING STRUCTURE HAVING A THIN DIELECTRIC SUBSTANCE

机译:具有绝缘结构的电感耦合等离子体装置,具有绝缘介质的支承结构

摘要

PURPOSE: An inductively coupled plasma apparatus with a structure holding dielectric is provided to generate uniform plasma while supporting a dielectric more stably by processing a substrate to be processed through an inductively-coupled plasma.;CONSTITUTION: A chamber(130) is divided into an antenna chamber and a substrate processing chamber by a dielectric. A gas supply unit supplies a processing gas to the substrate processing chamber. A discharging unit(150) exhausts the inside of the substrate processing chamber and maintains a reduced pressure state. A dielectric support structure(160) partitions the dielectric comprising the upper wall of a substrate process chamber into a plurality of partitions and maintains the inside of the substrate process chamber vacuum state. A high frequency antenna(170) is located in the antenna chamber and the top of the dielectric.;COPYRIGHT KIPO 2010
机译:目的:提供一种具有保持电介质结构的感应耦合等离子体装置,以产生均匀的等离子体,同时通过通过感应耦合等离子体处理待处理的基板来更稳定地支撑电介质。组成:腔室(130)分为一个天线室和衬底处理室由电介质构成。气体供应单元将处理气体供应到基板处理室。排出单元(150)排出基板处理室的内部并维持减压状态。电介质支撑结构(160)将包括衬底处理室的上壁的电介质划分为多个分区,并保持衬底处理室的内部为真空状态。高频天线(170)位于天线腔和电介质的顶部。; COPYRIGHT KIPO 2010

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