INGOT GROWING DEVICE, CAPABLE OF RANDOMLY CONTROLLING THE TEMPERATURE OF AN INDUCTION COIL, AND A GROWING METHOD THEREOF

摘要

PURPOSE: An ingot growing device and a growing method thereof are provided to increase the growth rate of an ingot through the concentrated heating of the contact area between an ingot and a silicon solution.;CONSTITUTION: A growth chamber(10) receives an ingot. A crucible(20) receives a silicon solution for growing the ingot. An induction coil(30) dissolves a poly-crystal silicon lump with the silicon solution. An induction coil heats the crucible with a variable temperature distribution. A controller(50) regulates the intensity of high frequency power. A shield body(40) blocks the heat radiated from the crucible.;COPYRIGHT KIPO 2010