FABRICATION METHOD OF A THIN FILM DEVICE, CAPABLE OF MINIMIZING THE CHANGE OF DEVICE CHARACTERISTICS BY A LASER RADIATION

摘要

PURPOSE: A fabrication method of a thin film device is provided to allow a user to remove a process of removing residue of a sacrificial layer by providing a junction layer of a thin film and a permanent substrate as an exfoliated film.;CONSTITUTION: In a fabrication method of a thin film device, a sacrificial layer is partly removed by using a dry etching process. The sacrificial layer(13') keeps at least thin film device on the first substrate. A supporting structure(17) is boned on at least one thin film device temporally. The at least one thin film device which is bonded on the supporting structure is separated from the first substrate. A sacrificial layer left behind is removed. The at least one thin film device is bonded on the second substrate(21). The support structure is separated from the at least one thin film device.;COPYRIGHT KIPO 2010