Nano-structural Characteristics of N-doped ZnO Thin Films and Fabrication of Film Bulk Acoustic Resonator Devices

摘要

N-doped ZnO thin films (ZnO:N) with c-axis preferred orientation were prepared on p-Si(100) wafers, using an RF magnetron sputter deposition. For ZnO deposition, N_(2)O gas was employed as a dopant source and various deposition conditions such as N_(2)O gas fraction and RF power were applied. In addition, the film bulk acoustic resonator (FBAR) devices with three kinds of top electrodes patterns were fabricated by using the N-doped ZnO thin films as the piezoelectric layers. The depth profiles of the nitrogen [N] atoms incorporated into the ZnO thin films were investigated by an Auger Electron Spectroscopy (AES) and the nano-scale structural characteristics of the N-doped ZnO (ZnO:N) thin films were also investigated by a scanning electron microscope (SEM) technique. The fabricated resonators were evaluated by measuring the return loss (S_(11)) characteristics using a probe station and E8361A PNA Network Analyzer.