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SEMICONDUCTOR MEMORY DEVICE WITH ONLY BIT LINE ON MEMORY CELL, CAPABLE OF OPERATING STABLY WITH LOW POWER
SEMICONDUCTOR MEMORY DEVICE WITH ONLY BIT LINE ON MEMORY CELL, CAPABLE OF OPERATING STABLY WITH LOW POWER
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机译:仅在存储器单元上有位线的半导体存储器,能够在低功率下稳定运行
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摘要
PURPOSE: A semiconductor memory device with only bit line on memory cell is provided to only require one N-type sensing amplifier for sensing a bit line by accepting data stored in a memory cell only through a bit line.;CONSTITUTION: A first memory cell is formed within a first memory cell array block. A second memory cell is formed within a second memory cell array block. A bit line(BL) is connected to a first memory cell(MC1) through a first separation transistor. The bit line is connected to a second memory cell(MC2) through a second isolating transistor.;COPYRIGHT KIPO 2010
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