SEMICONDUCTOR DEVICE, CAPABLE OF IMPROVING THE MINIATURIZATION AND THE INTEGRATION OF THE SEMICONDUCTOR DEVICE, AND A METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to reduce the size of a gate resistance by forming a gate electrode with copper metal.;CONSTITUTION: A low doped drain(LDD) region(120) is formed on a semiconductor substrate(100). A salicide(140) is formed on the upper side of the LDD region. A gate electrode(180) is formed on the semiconductor substrate. The gate electrode includes a gate oxide film(181) and a metal layer(183). An insulating layer(170) is formed on the upper side of the semiconductor substrate and the lateral direction of the gate electrode.;COPYRIGHT KIPO 2010