METHOD FOR MANUFACTURING A THREE DIMENSIONAL SEMICONDUCTOR DEVICE AND THE THREE DIMENSIONAL SEMICONDUCTOR DEVICE MANUFACTURED BY THE METHOD CAPABLE OF EASILY REALIZING HIGH INTEGRATION

摘要

PURPOSE: A method for manufacturing a three dimensional semiconductor device and the three dimensional semiconductor device manufactured by the method are provided to form a contact structure whose height is higher than the depth of a contact hole, thereby overcoming the processing limit of the contact hole which is not completely opened. ;CONSTITUTION: Sacrificial contact patterns are vertically connected to sacrificial films respectively in a contact area. The sacrificial films and the sacrificial contact patterns are eliminated. Contact recess areas(353) are formed on horizontal recess areas(351,352) and an insulation film. The horizontal recess areas and the contact recess areas are filled with conductive materials. Contact plugs are continuously expanded from each wiring pattern.;COPYRIGHT KIPO 2011