THIN FILM TRANSISTOR ARRAY SUBSTRATE WITH A SUPERIOR LIFT OFF MARGIN AND A METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A thin film transistor array substrate and a method for manufacturing the same are provided to obtain undercut of a sufficient width in a lower part of a photoresist pattern.;CONSTITUTION: A gate wire includes a gate line formed on an insulating substrate(10) and a gate electrode(24). A gate insulating layer(30) covers the gate wire. A semiconductor layer(44) is formed on the gate insulating layer. A data wire includes a data line, a source electrode(65), and a drain electrode(66) formed on the semiconductor layer. The first protective film(70) exposes a part of the drain electrode. The outer sidewall of the second protective film(80) is located in the inner side of the outer sidewall of the first protective film.;COPYRIGHT KIPO 2010