首页> 外国专利> THIN FILM TRANSISTOR ARRAY SUBSTRATE DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD OF THE THIN FILM TRANSISTOR ARRAY SUBSTRATE

THIN FILM TRANSISTOR ARRAY SUBSTRATE DISPLAY DEVICE INCLUDING THE THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD OF THE THIN FILM TRANSISTOR ARRAY SUBSTRATE

机译:包括薄膜晶体管阵列基板的薄膜晶体管阵列基板的显示装置以及薄膜晶体管阵列基板的制造方法

摘要

According to an embodiment of the present invention, a thin film transistor array substrate comprises: a first active layer which is arranged on a substrate, and includes a source region and a drain region separated from each other, and a channel region between the source region and the drain region; a second active layer which is arranged on the channel region of the first active layer, and has higher mobility than the first active layer; a gate insulation layer arranged on the second active layer; a gate electrode arranged on the gate insulation layer; an interlayer insulation film to cover the first and the second active layer, the gate insulation layer, and the gate electrode; a source electrode arranged on the interlayer insulation film and connected to the source region of the first active layer; and a drain electrode arranged on the interlayer insulation film and connected to the drain region of the first active layer. Accordingly, the second active layer having the higher mobility than the first active layer is included to improve a response speed in comparison to a case where only the first active layer is included. And since the source electrode and the drain electrode are connected to the first active layer of a thickness thicker than the second active layer to lower offset resistance, an increase in consumed power can be prevented.
机译:根据本发明的一个实施例,一种薄膜晶体管阵列基板包括:第一有源层,布置在基板上,并且包括彼此分离的源极区和漏极区以及位于源极区之间的沟道区。和漏区;第二有源层,布置在第一有源层的沟道区上,并且具有比第一有源层更高的迁移率;栅极绝缘层设置在第二有源层上;栅极布置在栅极绝缘层上;层间绝缘膜覆盖第一和第二有源层,栅绝缘层和栅电极;源电极设置在层间绝缘膜上并连接到第一有源层的源区。漏极设置在层间绝缘膜上并连接至第一有源层的漏极区域。因此,与仅包括第一有源层的情况相比,包括具有比第一有源层更高的迁移率的第二有源层以提高响应速度。并且,由于源电极和漏电极连接到第一有源层,该第一有源层的厚度比第二有源层的厚度厚以降低偏置电阻,所以可以防止功耗的增加。

著录项

  • 公开/公告号KR20170021472A

    专利类型

  • 公开/公告日2017-02-28

    原文格式PDF

  • 申请/专利权人 LG DISPLAY CO. LTD.;

    申请/专利号KR20150115859

  • 发明设计人 NOH JI YONG;JI KWANG HWAN;

    申请日2015-08-18

  • 分类号H01L29/786;H01L27/32;

  • 国家 KR

  • 入库时间 2022-08-21 13:28:04

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号