首页> 外国专利> SILICON SINGLE CRYSTAL COOLING DEVICE AND A SILICON SINGLE CRYSTAL GROWING DEVICE INCLUDING THE SAME, CAPABLE OF REMOVING AN ADDITIONAL FILLING PROCESS OF POLY CRYSTAL SILICON

SILICON SINGLE CRYSTAL COOLING DEVICE AND A SILICON SINGLE CRYSTAL GROWING DEVICE INCLUDING THE SAME, CAPABLE OF REMOVING AN ADDITIONAL FILLING PROCESS OF POLY CRYSTAL SILICON

机译:硅单晶冷却装置和包括该硅单晶生长装置的硅单晶生长装置,能够消除多晶硅的附加填充过程

摘要

PURPOSE: A silicon single crystal cooling device and a silicon single crystal growing device including the same are provided to reduce manufacturing costs and improve productivity by increasing the filling quantity of the poly crystal silicon by moving a cooling pipe.;CONSTITUTION: A chamber(110) provides a space for growing a single crystal ingot. A crucible(120) is included in the inside of a chamber in order to contain the silicon solution. A heater(130) heats the crucible. A raising unit(140) raises the cable by winding a cable(141). A silicon single crystal cooling device(150) cools the silicon single crystal ingot. The silicon poly crystal cooling device includes a cooling pipe(151) and a cooling pipe lifting unit(153).;COPYRIGHT KIPO 2010
机译:目的:提供一种单晶硅冷却装置和包括该单晶硅生长装置的硅单晶生长装置,以通过移动冷却管来增加多晶硅的填充量,从而降低制造成本并提高生产率。组成:腔室(110) )提供了生长单晶锭的空间。为了容纳硅溶液,坩埚(120)被包括在腔室内部。加热器(130)加热坩埚。提升单元(140)通过缠绕电缆(141)来使电缆升高。硅单晶冷却装置(150)冷却硅单晶锭。硅多晶冷却装置包括冷却管(151)和冷却管提升单元(153)。; COPYRIGHT KIPO 2010

著录项

  • 公开/公告号KR20100071526A

    专利类型

  • 公开/公告日2010-06-29

    原文格式PDF

  • 申请/专利权人 SILTRON INC.;

    申请/专利号KR20080130271

  • 发明设计人 SIM BOK CHEOL;CHO HYEON JONG;KIM DAE YEON;

    申请日2008-12-19

  • 分类号C30B15/22;C30B15/24;

  • 国家 KR

  • 入库时间 2022-08-21 18:32:24

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