PATTERN FORMATION METHOD OF A SEMICONDUCTOR DEVICE, CAPABLE OF SECURING THE UNIFORMITY OF THE CRITICAL DIMENSION OF A PATTERN IN A PERIPHERAL REGION AND A CELL REGION

摘要

PURPOSE: A pattern formation method of a semiconductor device is provided to improve the uniformity of a pattern CD(Critical Dimension) in a cell region and a peripheral region by differently setting the temperature of a bake processing after exposure and exposure energy.;CONSTITUTION: An amount of change of the pattern CD in a cell region due to bake temperature is calculated(210). The bake temperature about the cell region is set(220). The amount of change of the pattern CD in a peripheral circuit region due to the bake temperature and exposure energy are calculated while uniformly maintaining the pattern CD in a cell region(230). The bake temperature and exposure energy about the peripheral circuit region are set(240). An etching target film is patterned by using a photoresist pattern. The photoresist pattern is removed(250).;COPYRIGHT KIPO 2010