Three-dimensional structure recognition of circuit patterns on semiconductor devices using multiple SEM images detected in different electron scattering angles

摘要

We propose a method for recognizing the three-dimensional structure of circuit patterns to achieve automatic pattern width measurement of semiconductor devices using a scanning electron microscope (SEM). Pattern measurement requires a pattern recognition technique to identify the measurement position from an SEM image. However, the pattern width and brightness values of an image fluctuate depending on the patterning conditions, type of material, etc., so distinguishing between line and space through image matching based on brightness information is difficult. In view of this problem, we propose a line and space discrimination method that focuses on fundamentally different three-dimensional structures (concavity and convexity), and considering that this difference between concavity and convexity appears as a difference in the scattering angles of secondary electrons, we capture two images corresponding to these two scattering angles. In this way, we are able to design image features that present the difference between line and space from these two images, thus enabling the easy, high-speed capture of concavity and convexity information. Experimental results show that the proposed method achieves a 100% accuracy rate in automatic critical-dimension measurements.