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METHOD FOR FABRICATING A NON-VOLATILE MEMORY DEVICE, CAPABLE OF PREVENTING A REACTANT IMPURITIES ON A CONTROL GATE
METHOD FOR FABRICATING A NON-VOLATILE MEMORY DEVICE, CAPABLE OF PREVENTING A REACTANT IMPURITIES ON A CONTROL GATE
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机译:制造能够在控制门上防止反应性杂质的非易失性存储器的方法
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摘要
PURPOSE: A method for fabricating a non-volatile memory device is provided to improve the operating property of a memory device by forming a control gate in a uniform line shape without roughness.;CONSTITUTION: An element isolation film(108) is formed in an element isolation region. A dielectric film(110) is formed on a first conductive film and the element isolation film. A second conductive film and a third conductive film for a control gate are form on the dielectric film. A natural oxide film is formed between the second conductive film and the third conductive film. A gate mask pattern is formed on the third conductive film. The third conductive film is etched using the gate mask pattern until the natural oxide film is exposed. The exposed natural oxide film is eliminated. The gate mask pattern is eliminated.;COPYRIGHT KIPO 2010
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