METHOD FOR FORMING THE FINE PATTERNS OF A SEMICONDUCTOR DEVICE, CAPABLE OF SIMPLIFYING A DOUBLE PATTERNING PROCESS

摘要

PURPOSE: A method for forming the fine patterns of a semiconductor device is provided to reduce a time for a double pattern process by eliminating regions with the maximum energy and the minimum energy of radiated light source using respective developing solutions.;CONSTITUTION: A film to be etched(102), a hard mask film, and a photo-resist film(108) are successively formed on a semiconductor substrate. An exposure process is performed on the photo-resist film including a first region and a second region in order to form an exposure region. The first region to which the maximum energy of light source is radiated is eliminated. The second region to which the minimum energy of the light source is radiated is eliminated in order to form a photo-resist pattern. The hard mask film and the film to be etched are patterned according to the photo-resist pattern.;COPYRIGHT KIPO 2010