METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE, CAPABLE OF IMPROVING HOT CARRIER INJECTION

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve HCI and DC parameters by forming an LDD region through a first ion implantation and a second ion implantation with optimum process conditions with different angles.;CONSTITUTION: A gate oxide layer and a gate conductive layer are successively formed on a semiconductor substrate with a device isolation layer(2). A gate oxide layer and a gate electrode(4) are formed to remain on only transistor region. A first ion implantation is performed on the surface of the semiconductor substrate adjacent to both sides of the gate electrode. An LDD region is formed by performing a second ion implantation on the first ion implanted region.;COPYRIGHT KIPO 2010