METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, CAPABLE OF PREVENTING THE INCREASE IN A LEAKAGE CURRENT DUE TO AN INTERFACIAL LAYER AND CAPACITANCE DECREASE

摘要

PURPOSE: A method of manufacturing a semiconductor device is provided to prevent an interface layer from forming on a substrate by forming an insulating layer through plasma processing after forming metal-silicon combined layer through mutual reversal of a metal layer and a silicon layer.;CONSTITUTION: A silicon layer(12) is formed on a substrate(11). A metal layer is formed on the silicon layer. A silicon metal alloy layer is formed through the interaction of the metal layer and silicon layer. The plasma processing of the silicon metal alloy layer is performed to form the insulating. The silicon layer has a thickness of 1nm-6nm.;COPYRIGHT KIPO 2010