NONVOLATILE MEMORY DEVICE CAPABLE OF EXECUTING AN ERROR CORRECTION PROCESS BY DETERMINING A PROGRAM PROPERTY OF AN ERROR MEMORY CELL, AND AN OPERATION METHOD THEREOF

摘要

PURPOSE: A nonvolatile memory device and an operation method thereof are provided to improve the reliability of error correction by differently executing a correction process according to a program property of an error memory cell.;CONSTITUTION: A memory cell array(210) is composed of a plurality of memory cells. A page buffer part(220) comprises a page buffer. A Y decoder(230) offers a data input/output path of the page buffers. A X decoder(240) enables a memory block which is selected according to an input address. The X decoder interlinks word lines inside a memory block and a global word line. A voltage providing part(250) generates an operating voltage which is provided to the global word line. A control part(260) controls the entire operation of a nonvolatile memory device. An EDC(Error Detection code Checker)(270) confirms error generation state by using an error confirmation code according to an ECC unit.;COPYRIGHT KIPO 2010