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Nonvolatile memory devices that utilize error correction estimates to increase reliability of error detection and correction operations
Nonvolatile memory devices that utilize error correction estimates to increase reliability of error detection and correction operations
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机译:利用错误校正估计来增加错误检测和校正操作的可靠性的非易失性存储设备
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摘要
Example embodiments may provide a memory device and memory data reading method. The memory device according to example embodiments may include a multi-bit cell array, an error detector which may read a first data page from a memory page in the multi-bit cell array and may detect an error-bit of the first data page, and an estimator which may identify a multi-bit cell where the error-bit is stored and may estimate data stored in the identified multi-bit cell among data of a second data page. Therefore, the memory device and memory data reading method may have an effect of reducing an error when reading data stored in the multi-bit cell and monitoring a state of the multi-bit cell without additional overhead.
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