PATTERN IN A SEMICONDUCTOR DEVICE AND A METHOD FOR MEASURING A CRITICAL DIMENSION OF A PATTERN USING THE SAME, CAPABLE OF MEASURING THE DIMENSION OF A PHOTORESIST PATTERN

摘要

PURPOSE: A pattern in a semiconductor device and a method for measuring a critical dimension of a pattern using the same are provided to automatically address the location of a first gate pattern by forming a cover pattern on both sides of the first gate pattern.;CONSTITUTION: A linear photoresist pattern is arranged to be adjacent to a plurality of first gate patterns(110). A plurality of second gate patterns(112) are photoresist patterns having wider width than the first gate pattern. A plurality of second gate patterns are arranged to be adjacent to the first gate pattern. A cover pattern(120) is the photoresist pattern which is arranged around the first gate patterns. The cover pattern is arranged to be space from the gate pattern while having interval of 100nm to 300nm between them.;COPYRIGHT KIPO 2010