首页> 外国专利> MONOCRYSTAL MAKING METHOD IN WHICH THE RESISTIVITY OF IMPROVING THE PRODUCTIVITY OF MONOCRYSTAL UNIFORMS TO THE OPTIMIZED GRINDING SURFACE AND THE MONOCRYSTAL MANUFACTURED WITH THIS METHOD

MONOCRYSTAL MAKING METHOD IN WHICH THE RESISTIVITY OF IMPROVING THE PRODUCTIVITY OF MONOCRYSTAL UNIFORMS TO THE OPTIMIZED GRINDING SURFACE AND THE MONOCRYSTAL MANUFACTURED WITH THIS METHOD

机译:在提高均匀磨料的生产率以优化磨削表面的抵抗力和用这种方法制造的单晶制造方法

摘要

PURPOSE: The monocrystal making method in which the resistivity uniforms and the monocrystal manufactured with this method sanction the cusp magnetic field [CUSP magnetic field] in the growth of monocrystal.;CONSTITUTION: In the quartz crucible(10), the fused melt is accepted to the high temperature. The crucible housing(20) supports the quartz crucible to the specific form. The crucible rotation number shift(30) drops the quartz crucible as rising. It is spaced from the sidewall of the housing and the heater(40) heats the quartz crucible. The heat insulating mean(50) prevents from the heat generating being flown out from heater into outside.;COPYRIGHT KIPO 2010
机译:目的:电阻率均匀的单晶制造方法,以及用该方法制造的单晶,可抑制尖峰磁场& CUSP磁场]。组成:在石英坩埚(10)中,熔化的熔体可以承受高温。坩埚壳体(20)将石英坩埚支撑成特定形式。坩埚转数移位(30)随上升而下降。它与壳体的侧壁间隔开,并且加热器(40)加热石英坩埚。隔热装置(50)防止热量从加热器流到外面。; COPYRIGHT KIPO 2010

著录项

  • 公开/公告号KR20100092174A

    专利类型

  • 公开/公告日2010-08-20

    原文格式PDF

  • 申请/专利权人 SILTRON INC.;

    申请/专利号KR20090011422

  • 发明设计人 KIM SANG HEE;HWANG JUNG HA;LEE HONG WOO;

    申请日2009-02-12

  • 分类号C30B15/20;H01F5/00;

  • 国家 KR

  • 入库时间 2022-08-21 18:32:05

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