PHASE CHANGE MEMORY DEVICE AND A PROGRAMMING METHOD THEREOF, CAPABLE OF IMPROVING WRITE/ERASE DURABILITY PROPERTIES OF THE PHASE CHANGE MEMORY DEVICE OF A RECORD DISABLE STATE ACCORDING TO REPETITIVE WRITE AND ERASE OPERATION

摘要

PURPOSE: A phase change memory device and a programming method thereof are provided to increase durability by applying a reverse recovery pulse.;CONSTITUTION: A phase change memory array(24) comprises a plurality of phase change memory devices. A pulse generator(22) comprises a write current pulse, an erase current pulse, and a reverse recovery current pulse for the phase change memory device of a phase change memory array. The direction of the reverse recovery pulse is opposite to the direction of the write current pulse and the erase current pulse of the phase memory device. The pulse generator includes a bidirectional pulse generator which flows a current in both directions of the phase change memory device.;COPYRIGHT KIPO 2011