METHOD OF FABRICATING OF A SEMICONDUCTOR DEVICE, HAVING A GAP FILING LAYER INSIDE A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of fabricating of a semiconductor device is provided to form STI by forming an oxide film liner including nitrogen instead of a nitride liner between a side wall oxide and the oxide film liner.;CONSTITUTION: A pad oxide film and a nitride film are successively formed on a substrate(10). A trench is formed by etching the nitride film, the pad oxide film, and the substrate. The side oxide wall(51) is formed in the sidewall and bottom of the trench. The oxide film liner(71) including nitrogen is formed at the upper unit of the side oxide wall along the sidewall. A gap filling film(81) is formed on the oxide film liner.;COPYRIGHT KIPO 2011