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CRITICAL DIMENSION CORRECTION METHOD OF A PHOTO MASK, WHICH USES A CLEANING PROCESS, CAPABLE OF EXECUTING A CRITICAL DIMENSION CORRECTION PROCESS
CRITICAL DIMENSION CORRECTION METHOD OF A PHOTO MASK, WHICH USES A CLEANING PROCESS, CAPABLE OF EXECUTING A CRITICAL DIMENSION CORRECTION PROCESS
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机译:使用清洁过程并能够执行临界尺寸校正过程的照片掩模的临界尺寸校正方法
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摘要
PURPOSE: A critical dimension correction method of a photo mask is provided to easily correct a critical dimension by etching a pattern surface by using a cleaning solution.;CONSTITUTION: A critical dimension correction method measures the critical dimension of a mask pattern which is transcribed to a wafer formed on a substrate(S110). The critical dimension uniformity, which has an error critical dimension, is detected by using the measured dimension(S120). The error critical dimension is corrected by executing a cleaning process which recesses the critical dimension of the defected pattern(S130). The suitability of the critical dimension correction is detected by inspecting the critical width of the mask pattern(S140).;COPYRIGHT KIPO 2011
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