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METHOD OF CORRECTION A CRITICAL DIMENSION IN A PHOTO MASK AND A THE PHOTO MASK CORRECTED THE CRITICAL DIMENSION USING THE SAME
METHOD OF CORRECTION A CRITICAL DIMENSION IN A PHOTO MASK AND A THE PHOTO MASK CORRECTED THE CRITICAL DIMENSION USING THE SAME
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机译:校正照片掩码中的临界尺寸的方法,以及使用相同的照片掩码校正临界尺寸的方法
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摘要
A method for correcting the CD(Critical Dimension) of a photomask and the photomask are provided to prevent a photomask substrate from being etched and to reduce the damage of the photomask by correcting exactly the CD of a photoresist pattern using an correction layer with adjusted thickness. A photomask is formed by forming a plurality of light shielding patterns on a substrate(S10). A CD error region is detected from the plurality of light shielding patterns(S40). A correction layer is formed on the CD error region in order to vary the intensity of an incident light, so that the CD of a circuit pattern is corrected, wherein the circuit pattern is formed on the substrate by using the light shielding patterns(S60).
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