VERTICAL CHANNEL TRANSISTOR AND MANUFACTURING METHOD THEREOF HAVING THE DOUBLE GATE ELECTRODE SECURING THE CHANNEL LENGTH THROUGH THE VERTICAL CHANNEL

摘要

PURPOSE: A vertical channel transistor and the manufacturing method thereof having the double gate electrode are that the pillar the film for pillar is in filled is formed in the trench in which the sacrificing layer is etched and which is formed for pillar.;CONSTITUTION: The sacrificing layer(21) is formed on the substrate(20). A plurality of trench for pillars in which the sacrificing layer is etched and exposing substrate is formed. The film for pillar is in filled within the trench for pillar and a plurality of pillars(22) projected from substrate is formed. The sacrificing layer is eliminated and the sidewall of pillar exposes.;COPYRIGHT KIPO 2011