METHOD WHICH MANUFACTURES A SEMICONDUCTOR DEVICE HAVING A VERTICAL TRANSISTOR, CAPABLE OF CONTROLLING THE CHANNEL LENGTH OF A VERTICAL GATE THROUGH THE ETCHING PROCESS OF A FIRST ACTIVE PILLAR

摘要

PURPOSE: A method is provided to effectively remove a gate conductive layer in the upper side wall of an active pillar by forming a vertical gate after forming a first active pillar.;CONSTITUTION: A first active pillar(22) is formed on a substrate(21). A gate conductive layer(27) protects the side wall between the first active pillar and a hard mask layer. A word line conductive layer fills a space between the gate conductive layers. A word line(33A) and a vertical gate(27A) are formed by simultaneously removing a part of the word line conductive layer and the gate conductive layer. An interlayer insulating layer(28A) is formed in a front side including the word line. A second active pillar(35) is formed on the first active pillar.;COPYRIGHT KIPO 2011