SEMICONDUCTOR DEVICE INCLUDING A VERTICAL TRANSISTOR AND A MANUFACTURING METHOD THEREOF, CAPABLE OF PREVENTING ACTIVE PILLARS FROM FALLING WHEN AN ASPECT RATIO INCREASES

摘要

PURPOSE: A semiconductor device including a vertical transistor and a manufacturing method thereof are provided to obtain a stable pillar structure by forming a first active pillar functioning as a channel region and a second active pillar functioning as a drain region.;CONSTITUTION: A plurality of first active pillars(22), a vertical gate(27A), a word line(32), and a spacer(34A) are successively formed on a substrate(21). The vertical gate surrounds the sidewall of the first active pillar. The word line connects the vertical gates. The spacer surrounds the exposed sidewall of the word line on the vertical gate. A second active pillar(37) is formed on the first active pillar. A buried bit line(25) is separated from the trench. A gate insulation layer(26A) is formed between the vertical gate and the first active pillar. A second interlayer insulation layer(30A) is buried in the trench. A first interlayer insulation layer(28A) is formed between adjacent vertical gates. The second active pillar includes a silicon epitaxial layer.;COPYRIGHT KIPO 2011