首页> 外国专利> APPARATUS FOR GENERATING HIGH DENSITY PLASMA, CAPABLE OF SECURING THE SUPERIOR GAP-FILLING CHARACTERISTIC WITHOUT THE INCREASE OF A PROCESSING TIME

APPARATUS FOR GENERATING HIGH DENSITY PLASMA, CAPABLE OF SECURING THE SUPERIOR GAP-FILLING CHARACTERISTIC WITHOUT THE INCREASE OF A PROCESSING TIME

机译:用于产生高密度等离子体的装置,该装置能够在不增加处理时间的情况下确保较高的间隙填充特性

摘要

PURPOSE: An apparatus for generating high density plasma is provided to form a magnetic mirror in a chamber by inserting a mirror coil into an inductively coupled plasma type high density plasma machine.;CONSTITUTION: An apparatus for generating high density plasma includes a chamber(200), coils(210, 212), and an electrostatic chuck. The chamber is a dome shape and provides a space for generating plasma. The electrostatic chuck is located on the center of the chamber. A plurality of gas spraying injectors sprays a source gas to the upper side of a semiconductor substrate which is loaded on the electrostatic chuck.;COPYRIGHT KIPO 2011
机译:目的:提供一种用于产生高密度等离子体的设备,通过将镜线圈插入感应耦合等离子体型高密度等离子体机中在腔室中形成磁镜。组成:用于产生高密度等离子体的设备包括一个腔室(200个) ),线圈(210、212)和静电吸盘。该室是圆顶形状,并提供用于产生等离子体的空间。静电卡盘位于腔室的中心。多个气体喷射注射器将源气体喷射到装在静电卡盘上的半导体衬底的上侧。COPYRIGHTKIPO 2011

著录项

  • 公开/公告号KR20100119400A

    专利类型

  • 公开/公告日2010-11-09

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20090038497

  • 发明设计人 LEE DONG HYUB;

    申请日2009-04-30

  • 分类号H05H1/24;H05H1/40;

  • 国家 KR

  • 入库时间 2022-08-21 18:31:35

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号