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OPTICAL AMPLIFIER INTEGRATED SUPER LUMINESCENT DIODE AND EXTERNAL CAVITY LASER USING THIS

机译:使用此光学放大器集成的超级发光二极管和外腔激光

摘要

The present invention relates to a super luminescent diode, a low threshold current is low power consumption, low It relates to a super luminescent diode for the light source of an external resonator type laser with a high output in the current operation. ; to this end, the super luminescent diode are integrated reflection type light amplifier according to an embodiment of the present invention, SLD (Super Luminescent Diode) region and, amplifying the light generated from the SLD region a substrate having a SOA (Semiconductor Optical Amplifier) region for; It extends over the optical waveguide of the SLD region and the SOA region on the substrate, and a buried heterostructure (Buried Heterostructure) structure including an active layer having a tapered shape from the SOA region; It is formed around the active layer, and blocking the flow of current to other than the active layer, a different conductivity type current blocking layer of the laminated semiconductor layer; And an optical waveguide and a cladding layer formed on the current blocking layer. The present invention as described above, and a low threshold current and single integration of the SOA to the SLD is used in the PLC-ECL output is the advantage that can provide two times higher than the conventional light source SLD.
机译:超发光二极管技术领域本发明涉及一种低阈值电流,低功耗,低阈值的超发光二极管。本发明涉及一种在电流操作中用于高输出的外部谐振器型激光器的光源的超发光二极管。 ;为此,根据本发明实施例的超发光二极管是集成反射型光放大器,其是SLD(超发光二极管)区域,并且将具有SOA的衬底放大从SLD区域产生的光(半导体光放大器)。区域它在衬底上的SLD区域和SOA区域的光波导上延伸,并且在掩埋异质结构(Buried Heterostructure)结构中包括从SOA区域起具有锥形形状的有源层。它形成在有源层周围,并且阻挡电流流向有源层以外的,层叠的半导体层的不同导电类型的电流阻挡层。并在电流阻挡层上形成光波导和覆层。如上所述的本发明,并且在PLC-ECL输出中使用低阈值电流和SOA到SLD的单一集成是可以提供比传统光源SLD高两倍的优点。

著录项

  • 公开/公告号KR100958338B1

    专利类型

  • 公开/公告日2010-05-17

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20070133553

  • 发明设计人 주정진;오수환;

    申请日2007-12-18

  • 分类号H01S5/30;

  • 国家 KR

  • 入库时间 2022-08-21 18:31:13

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