HIGH-PURITY HAFNIUM, TARGET AND THIN FILM COMPRISING HIGH-PURITY HAFNIUM, AND PROCESS FOR PRODUCING HIGH-PURITY HAFNIUM

摘要

using a hafnium sponge with reduced zirconium as the raw material , and also it contained in the hafnium Fe, Cr, Ni of impurities , Ca, Na, K impurities , Al, Co, Cu, Ti, W, Zn impurities , and the line count number , U, Th impurities , Pb, Bi impurities , and the amount of the gas component C , with respect to the manufacturing method of high purity hafnium were each reduced, and effective and reliable manufacturing techniques, and also provides a high purity hafnium material , the target , and the gate insulating film or a metal gate thin film formed by sputtering for the material obtained by it . ; a Zr and gas components , except for at least 6N purity , Fe, Cr, Ni , respectively below 0.2ppm, Ca, Na, K are each less than 0.1ppm, Al, Co, Cu, Ti, W, Zn is 0.1 High purity hafnium , characterized in that not more than ppm.