Light Emitting Diode with Self-assembled ZnO Quantum dot

摘要

Self-formation according to the present invention (self-assembled) ZnO is equipped with light-emitting diode is a semiconductor or insulator single crystal After forming a Zn thin film on a substrate, wherein the Zn film and reaction of oxygen by adjusting the temperature of the substrate and to control the stress (stress) of the self-Zn film formed on ZnO quantum dots (Quantum dot) to the substrate (self-assembled ) and simultaneously producing a self-forming, including the step of forming the surface unevenness (surface roughness) of the substrate ZnO quantum dots substrate; The self-formed ZnO quantum dots is laminated to the upper substrate, n-type semiconductor layer external voltage or current is applied to the metal pad is formed; An external voltage or current is applied to the metal pad is formed in the p-type semiconductor layer; And comprising: a; and the n-type semiconductor layer is provided between the p-type semiconductor layer and the n-electrons and the holes provided from the p-type semiconductor layer, which is provided by the semiconductor layer bonded to the active layer to generate light The ZnO quantum dots, and the dots of the substrate acts as a self-formed ZnO reflector (reflector) of the light generated from the active layer, self-forming the surface irregularities of the self-formed ZnO substrate having an external quantum efficiency of the extraction by acting to increase the reflection layer ZnO This feature is provided with a light emitting diode.