Magnetic tunneling junction cell comprising free magnetic layer having low magnetic moment and magnetic random access memory comprising the same

摘要

The magnetic moment of the film having a low magnetic pre-start on the magnetic tunnel junction MRAM cells and containing it It is. The invention disclosed the lower electrode and the lower electrode are sequentially laminated and formed on the rich, the tunneling film, comprising an upper magnetic layer and the upper electrode, the upper magnetic layer comprises a magnetic film having a thickness of 5nm or less free, and the free magnetic Here the magnetic moment as a deposition film is not more than 800emu / , magnetic moment of service 400emu / smaller amorphous rare-earth transition metal compound layer or an iron terbium (FeTb) MTJ cell membrane, and is characterized in that, the magnetic containing such MTJ cell It provides the program. The aspect ratio of the MTJ cells in the MRAM can be less than or equal to 2.