首页>
外国专利>
METHOD OF DEPOSITING DIAMOND-LIKE CARBON FILM ON ORGANIC GLASS SUBSTRATE
METHOD OF DEPOSITING DIAMOND-LIKE CARBON FILM ON ORGANIC GLASS SUBSTRATE
展开▼
机译:在有机玻璃基质上沉积类金刚石薄膜的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
FIELD: physics.;SUBSTANCE: nitrogen is fed into a vacuum chamber in which there is an ion and a magnetron source until pressure increases to 0.02-0.08 Pa and igniting glow-discharge plasma. A direct voltage ion source for accelerating the stream of nitrogen ions is placed between the cathode and anode and the stream of nitrogen ions cleans the surface of a substrate which is fixed relative the stream of ions and whose temperature is not above 80°C. After cleaning, nitrogen supply is cut and a mixture of nitrogen N2 and toluene C7H8 vapour is fed into the vacuum chamber in ratio N2: C7H8 (90-70)%:(10-30)% until pressure of 0.02-0.05 Pa is established in the chamber and a 40-60 nm thick buffer adhesive layer is deposited, whose refraction index is equal to 1.5-1.8, while power of the ion source varies between 40 W and 60 W and bias voltage of the substrate varies from +50 V to +100 V. Toluene vapour is then fed into the ion source until 0.05-0.1 Pa pressure is achieved and a 80-120 nm thick protective layer is deposited, whose refraction index equals 2.1-2.4, while bias voltage of the substrate varies from -100 V to -200 V and power of the ion source varies from 60 W to 80 W. Vapour of liquid C6H12NSi2 is fed into the ion source until 0.1-0.2 Pa pressure is achieved and bias voltage ranging from -150 V to -250 V is applied across the substrate in order to deposit an anti-dirt layer of α-SiCxNy with thickness of 30-50 nm.;EFFECT: increased protection of organic substances from destructive and contaminating effects of the external medium.;2 cl, 6 dwg
展开▼
机译:领域:物理学;物质:将氮气送入一个有离子和磁控管源的真空室,直到压力增加到0.02-0.08 Pa并点燃辉光放电等离子体。用于加速氮离子流的直流电压离子源放置在阴极和阳极之间,氮离子流清洁相对于离子流固定且温度不超过80°C的基板表面。清洗后,切断氮气供应,将氮气N 2 Sub>和甲苯C 7 Sub> H 8 Sub>的混合物按比例送入真空室N 2 Sub>:C 7 Sub> H 8 Sub>(90-70)%:( 10-30)%,直到建立0.02-0.05 Pa的压力在腔室中沉积40-60 nm厚的缓冲粘合剂层,其折射率等于1.5-1.8,而离子源的功率在40 W至60 W之间变化,基板的偏置电压在+50 V之间变化然后将甲苯蒸气送入离子源,直到达到0.05-0.1 Pa的压力,并沉积80-120 nm厚的保护层,其折射率等于2.1-2.4,而衬底的偏置电压为-100 V至-200 V,离子源的功率在60 W至80 W之间变化。液体C 6 Sub> H 12 Sub> NSi 2 Sub的蒸气将离子注入离子源,直到达到0.1-0.2 Pa的压力,并在电极上施加-150 V至-250 V的偏置电压以沉积厚度为30至50 nm的α-SiC x Sub> N y Sub>防污层;效果:增强了有机物质的保护,使其免受破坏和破坏外部介质的污染作用。; 2 cl,6 dwg
展开▼