Powerful high-voltage insulated-gate bipolar transistor with antiparallel diodes high-speed temperature resistance

摘要

Powerful high voltage insulated-gate bipolar transistor with integrated in one housing or chip carrier included antiparallel collector-emitter fast high voltage diode which may be used in the power conversion device in the electronic and electrical industries.; The main object of the proposed utility model is to increase the reliability of IGBT devices, improving their dynamics shift, increased temperature stability, increased resistance at the resonance modes of the hard switching, reducing the total energy loss during switching.; This technical task is achieved in that instead of silicon carbide Schottky barrier diode with a high temperature is used ultrafast gallium arsenide pin diode.; The design of powerful high voltage IGBT transistor comprises a transistor IGBT chip 1, an external antiparallelnovklyuchennogo collector emitter 2 crystal gallium arsenide, fast pin diode; ceramic chip carrier 3, a metal housing flange 4 electrical terminals of the emitter 5, the insulated gate 6; collector 7; electrical interconnects 8.; Metal parts of the chip and chip 4, 5, 6, 7 are made by stamping, the insulating heat-conductive ceramic 3 is made of a blend of materials with a chemical composition Beo, AlN, Al ₂ O ₃ and others. By hot pressing, molding, followed by applying, by heating, himosazhdeniem metallization.; Crystal 1 IGBT device manufactured by the above described process route using photolithography, ion implantation, heat treatments, radiation treatments, application of ohmic metal contacts to the regions of the emitter, collector and gate.; Crystal 2 GaAs pin diode is fabricated by sequential liquid epitaxy cathode high resistance and low resistance regions n-type anode monocrystalline high-p ⁺ - type substrates of gallium arsenide, with the creation of metal contacts to the anode and cathode regions of the mesa region at the periphery of the anode-cathode zone followed by protection of exiting to the surface of p-n junction.; instrument assembly as a whole is carried out by soldering or welding on the chip carrier terminals and interconnections.