Insulated gate bipolar transistor with monolithically integrated antiparallel diode, has complimentary electrode of antiparallel diode formed by semiconductor well on front side

摘要

At least one emitter-short region (39) is only integrated in the region of a high-voltage edge (31). The IGBT has at least one emitter region (35), which has no emitter-short regions within the high-voltage edge. The complimentary electrode of an antiparallel diode is formed by a semiconductor well (33) on the front side. An Independent claim is included for an IGBT with a monolithically integrated antiparallel diode.