A method for producing a different mechanical deformation in the different channel regions by forming a an etching stop layer stack with differently modified internal tension

摘要

A method with:Forming a first etch stop layer (218) via a first transistor (200n) and a second transistor (200p);Forming a second etch stop layer (216) via the first etch stop layer (218), wherein the second etch stop layer (216) has a first specified intrinsic voltage;Forming a first mask layer via the first and second (200n, 200p) transistor in such a way that the first transistor (200n) is exposed and the second transistor (200p) is covered;Removal of a first region of the second etch stop layer (216), which is above the first transistor (200n) is formed by a selective etching process using the first etch stop layer (218) as an etching stop;Forming a fourth etch stop layer (217) over the first and the second transistor (200n, 200p);Forming a third etch stop layer after the forming of the fourth etch stop layer over the first and the second transistor (200n, 200p), wherein the third etch stop layer has a second intrinsic voltage, which differs from the first intrinsic voltage;..