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A process for the preparation of a semiconductor device having a dielectric gate layer with a high k and a gate electrode of metal
A process for the preparation of a semiconductor device having a dielectric gate layer with a high k and a gate electrode of metal
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机译:一种具有高k介电栅极层和金属栅电极的半导体器件的制备方法
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摘要
A method for making a semiconductor device is described. That method comprises forming a first dielectric layer on a substrate, a trench within the first dielectric layer, and a second dielectric layer on the substrate. The second dielectric layer has a first part that is formed in the trench and a second part. After a first metal layer with a first workfunction is formed on the first and second parts of the second dielectric layer, part of the first metal layer is converted into a second metal layer with a second workfunction.
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