A process for the preparation of a clamped layer on a voltage compensated layer stack with a low defect density, layer stacks and its use

摘要

A method for producing a strained layer (14; 24; 34) on a voltage compensated layer stack (11, 12, 13, 21, 22, 23, 31, 32, 33a, 33b) with a low defect density, with the steps of:– on a substrate (11, 21, 31), a relaxed, pressure - or tensile-strained silicon - germanium - buffer layer (12, 22, 32) is arranged,– on the relaxed, pressure - or zugverpannten silicon - germanium - buffer layer (12, 22, 32), at least one silicon - germanium - intermediate layer (13, 23, 33a, 33b) to the substrate (11, 21, 31) opposite side of the buffer layer (12, 22, 32) is arranged,– on the at least one silicon - germanium - intermediate layer (13, 23, 33a, 33b), said strained layer (14, 24, 34) is arranged,whereinthe intermediate layer (13, 23, 33a, 33b), the buffer layer (12, 22, 32) and said strained layer (14, 24, 34), each with a force per unit of length is selected, in which the total power per unit length in the layer stack (11, 12, 13, 14, 21, 22, 23, 24, 31, 32,..