A method for the production of transistors having epitaxial silicon - germanium for reduced contact resistance in the case of field effect transistors -

摘要

A method for the preparation of n - channel - and p - channel - transistors, wherein said method comprising the steps of:Form of recesses in a silicon substrate for source - and the drain - areas adjacent to the gate - structures for n - channel - and p - channel - transistors;Waxes of sige in the recesses, in order to source - and the drain - regions for the n - channel - and p - channel - transistors; andDegradation of voltage in channel - areas of the n - channel - transistors, which originates from the growth of the sige, without the voltage in channel - areas of the p - channel - transistors to substantially influence, wherein the stress in the n - channel - transistors is reduced by a dielectric material of isolation trenches is etched on one side of the source - region and a side of the drain - region of the n - channel - transistors are arranged.